The estimation of yield and optimization of photonic integrated circuit (PIC) design require ability to accurately account for variations in the silicon photonic (SiPh) technological parameters. These variations can be systematic (i.e., deterministic) or non-systematic (i.e., random). The spatial scales of variations include die-to-die (or global) variations, and intra-die (or local) variations. The intra-die variations can further be divided into spatially correlated and independent variations. The new release of OptSim offers powerful, EDA-like Monte Carlo and corner analyses to account for all these variations within OptoCompiler EDPA environment making design experience closer to the traditional CMOS chip design.

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