La Luce Cristallina launched its 0.5-micrometer (µm) silicon-based quantum paraelectric strontium titanate on insulator (QP-STOI) wafer platform, enabling researchers and national laboratories to leverage STO’s low-temperature quantum paraelectric properties for next-generation devices. Built on a thick layer of silicon dioxide (SiO₂), the bulk-like, highly insulating STO layer is 100 times thicker than conventional STO buffer layers used for epitaxial growth on Si, with its highly insulating nature enabling organizations to use STO’s extreme voltage-tunable dielectric behavior at cryogenic temperatures. This enhanced tunability supports applications such as parametric amplifiers for qubit readout, tunable microwave components and future electro-optic components.

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