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20th November 2015

Working indium phosphide laser arrays grown on a 300 mm silicon wafer have been demonstrated by Ghent University and imec, the Belgium nano-electronics R&D centre. Growing lasers on silicon promises to bring monolithic silicon photonics circuits a step closer.

“Monolithic integration offers the best scalability once you can grow III-V [material] and do wafer-scale processing,” said Professor Dries Van Thourhout of Ghent University. “But it is also the most challenging to implement in terms of pure physics.”

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